Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers

H. D. Summers, P. Mogensen, P. Rees, P. Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The article presents an investigation on the spontaneous emission from strained and unstrained devices for the observation of strain induced changes in the valence bands and to measure the threshold gain of the lasers. The compressively strained (AlyGa1-y)xIn1-xP QW lasers were used for the study with strain ranging from 0% to 1%. And the spontaneous emission was studied through a narrow window etched into the upper contact of the lasers.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume8
ISBN (Print)0780319710
StatePublished - Jan 1 1994
EventProceedings of the Conference on Lasers and Electro-Optics - Anaheim, CA, USA
Duration: May 8 1994May 13 1994

Other

OtherProceedings of the Conference on Lasers and Electro-Optics
CityAnaheim, CA, USA
Period5/8/945/13/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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