Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers

H. D. Summers; P. Mogensen; P. Rees; P. Blood

Recombination mechanisms and optical losses in strained layer, (Al_yGa_1-y)_xIn_1-xP lasers

H. D. Summers, P. Mogensen, P. Rees, P. Blood

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The article presents an investigation on the spontaneous emission from strained and unstrained devices for the observation of strain induced changes in the valence bands and to measure the threshold gain of the lasers. The compressively strained (Al_yGa_1-y)_xIn_1-xP QW lasers were used for the study with strain ranging from 0% to 1%. And the spontaneous emission was studied through a narrow window etched into the upper contact of the lasers.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	8
ISBN (Print)	0780319710
State	Published - Jan 1 1994
Event	Proceedings of the Conference on Lasers and Electro-Optics - Anaheim, CA, USA Duration: May 8 1994 → May 13 1994

Other

Other	Proceedings of the Conference on Lasers and Electro-Optics
City	Anaheim, CA, USA
Period	5/8/94 → 5/13/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers",

abstract = "The article presents an investigation on the spontaneous emission from strained and unstrained devices for the observation of strain induced changes in the valence bands and to measure the threshold gain of the lasers. The compressively strained (AlyGa1-y)xIn1-xP QW lasers were used for the study with strain ranging from 0% to 1%. And the spontaneous emission was studied through a narrow window etched into the upper contact of the lasers.",

author = "Summers, {H. D.} and P. Mogensen and P. Rees and P. Blood",

year = "1994",

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day = "1",

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booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

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note = "Proceedings of the Conference on Lasers and Electro-Optics ; Conference date: 08-05-1994 Through 13-05-1994",

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T1 - Recombination mechanisms and optical losses in strained layer, (AlyGa1-y)xIn1-xP lasers

AU - Summers, H. D.

AU - Mogensen, P.

AU - Rees, P.

AU - Blood, P.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The article presents an investigation on the spontaneous emission from strained and unstrained devices for the observation of strain induced changes in the valence bands and to measure the threshold gain of the lasers. The compressively strained (AlyGa1-y)xIn1-xP QW lasers were used for the study with strain ranging from 0% to 1%. And the spontaneous emission was studied through a narrow window etched into the upper contact of the lasers.

AB - The article presents an investigation on the spontaneous emission from strained and unstrained devices for the observation of strain induced changes in the valence bands and to measure the threshold gain of the lasers. The compressively strained (AlyGa1-y)xIn1-xP QW lasers were used for the study with strain ranging from 0% to 1%. And the spontaneous emission was studied through a narrow window etched into the upper contact of the lasers.

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M3 - Conference contribution

AN - SCOPUS:0028016768

SN - 0780319710

VL - 8

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Proceedings of the Conference on Lasers and Electro-Optics

Y2 - 8 May 1994 through 13 May 1994

ER -

Recombination mechanisms and optical losses in strained layer, (Al_yGa_1-y)_xIn_1-xP lasers

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