Recombination in quantum dot ensembles

Peter Blood, Helen Pask, Ian Sandall, Huw Summers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


We have calculated recombination rates of an inhomogeneous ensemble of 106 dots by summing localized recombination rates at individual dots, with occupation of dot states in the inhomogeneous distribution specified by Fermi Dirac statistics. We assign the same single dot recombination lifetime (1 ns) to all recombination processes to reveal the effect of localization on the overall rates. For the simplest system of the ground states alone deep state, radiative and Auger recombination processes depend in a similar manner upon the population of electrons in the ground states Consequently the light-current curves for the ground state are approximately linear and are not sensitive to the dominant non-radiative process. When excited states are included Auger recombination becomes dominant at high ensemble populations due to the higher degeneracy assigned to the excited states. While the form of the light-current curves of the total dot system do depend upon the dominant recombination process, an analysis based on power law relations with respect to the ensemble electron population are not appropriate.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers VI
StatePublished - 2007
EventNovel In-Plane Semiconductor Lasers VI - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherNovel In-Plane Semiconductor Lasers VI
Country/TerritoryUnited States
CitySan Jose, CA


  • Light emitting diodes
  • Quantum dots
  • Recombination

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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