Quantum well structures for THz bandwidth near-infrared unipolar semiconductor lasers

C. Y.L. Cheung, P. Rees, K. A. Shore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Intersubband semiconductor lasers provide possibilities for obtaining compact laser sources in the mid-infrared (MIR) spectral region. The dynamical behaviour of such lasers is governed by electron lifetimes, which are typically of order 1 ps in coupled quantum well structures. In the present paper, attention is given to the design of a near-infrared unipolar semiconductor laser with a lasing wavelength of 1.55 μm. Calculations have been undertaken of the optical gain spectra of this structure and compared to that of a similiar MIR structure. In addition, it has been found that very high direct-current modulation bandwidths would be achievable in these lasers.

Original languageEnglish (US)
Title of host publication1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Proceedings
EditorsP. Harrison
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-81
Number of pages3
ISBN (Electronic)0780349032, 9780780349032
DOIs
StatePublished - 1998
Event1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Leeds, United States
Duration: Sep 3 1998Sep 4 1998

Publication series

Name1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998 - Proceedings
Volume1998-September

Other

Other1998 IEEE 6th International Conference on Terahertz Electronics, THz 1998
CountryUnited States
CityLeeds
Period9/3/989/4/98

Keywords

  • intersubband
  • near-infrared
  • quantum wells
  • semiconductor
  • terahertz bandwidth
  • unipolar

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Oral Surgery

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