Proton implantation intermixing of GaAs/AlGaAs quantum wells

Gregory F. Redinbo; Harold G. Craighead; J. Minghuang Hong

doi:10.1063/1.354575

Proton implantation intermixing of GaAs/AlGaAs quantum wells

Gregory F. Redinbo, Harold G. Craighead, J. Minghuang Hong

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Abstract

We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H⁺ doses ranging from 5×10 ¹³ to 1×10¹⁶ ions/cm². Implantation of 20 keV H⁺ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron-heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.

Original language	English (US)
Pages (from-to)	3099-3102
Number of pages	4
Journal	Journal of Applied Physics
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.354575
State	Published - Dec 1 1993

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Physics and Astronomy(all)

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title = "Proton implantation intermixing of GaAs/AlGaAs quantum wells",

abstract = "We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×10 13 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron-heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.",

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year = "1993",

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AU - Redinbo, Gregory F.

AU - Craighead, Harold G.

AU - Hong, J. Minghuang

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×10 13 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron-heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.

AB - We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5×10 13 to 1×1016 ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron-heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.

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Proton implantation intermixing of GaAs/AlGaAs quantum wells

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