Preparation and characterization of the Ga doped Bi-Sr-Ca-Cu-O system

L. Dimesso; I. Matsubara; T. Ogura; R. Funahashi; H. Yamashita; Anna Tampieri

doi:10.1016/0921-4534(94)90084-1

Preparation and characterization of the Ga doped Bi-Sr-Ca-Cu-O system

L. Dimesso, I. Matsubara, T. Ogura, R. Funahashi, H. Yamashita, Anna Tampieri

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Abstract

The preparation and the characterization of the 2212 phase in the Bi₂Sr_1.7CaGa_xCu_2-xO_y system prepared by a solid- state reaction is reported. The dependence of the thermal, structural and superconducting properties on the Ga content is discussed. XRD data and SEM-EDX observations revealed the presence of Bi-Sr-Ca-Ga complex oxides in the Ga richer compounds. The electrical and magnetic measurements showed a single step as well as a broadening of the transitions width at an increase of the Ga content. The higher critical current density value (3.8×10⁶ A cm^-2 at 5 K for H = 2 KOe and 5.3 × 10⁶ A cm^-2 at 5 K H = 2 KOe for x = 0 and x = 0.8, respectively) found in the Ga doped sample has been explained as a direct consequence of a stronger pinning due to the presence of the Ga containing complex oxides.

Original language	English (US)
Pages (from-to)	291-299
Number of pages	9
Journal	Physica C: Superconductivity and its Applications
Volume	227
Issue number	3-4
DOIs	https://doi.org/10.1016/0921-4534(94)90084-1
State	Published - Jul 1 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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title = "Preparation and characterization of the Ga doped Bi-Sr-Ca-Cu-O system",

abstract = "The preparation and the characterization of the 2212 phase in the Bi2Sr1.7CaGaxCu2-xOy system prepared by a solid- state reaction is reported. The dependence of the thermal, structural and superconducting properties on the Ga content is discussed. XRD data and SEM-EDX observations revealed the presence of Bi-Sr-Ca-Ga complex oxides in the Ga richer compounds. The electrical and magnetic measurements showed a single step as well as a broadening of the transitions width at an increase of the Ga content. The higher critical current density value (3.8×106 A cm-2 at 5 K for H = 2 KOe and 5.3 × 106 A cm-2 at 5 K H = 2 KOe for x = 0 and x = 0.8, respectively) found in the Ga doped sample has been explained as a direct consequence of a stronger pinning due to the presence of the Ga containing complex oxides.",

author = "L. Dimesso and I. Matsubara and T. Ogura and R. Funahashi and H. Yamashita and Anna Tampieri",

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T1 - Preparation and characterization of the Ga doped Bi-Sr-Ca-Cu-O system

AU - Dimesso, L.

AU - Matsubara, I.

AU - Ogura, T.

AU - Funahashi, R.

AU - Yamashita, H.

AU - Tampieri, Anna

PY - 1994/7/1

Y1 - 1994/7/1

N2 - The preparation and the characterization of the 2212 phase in the Bi2Sr1.7CaGaxCu2-xOy system prepared by a solid- state reaction is reported. The dependence of the thermal, structural and superconducting properties on the Ga content is discussed. XRD data and SEM-EDX observations revealed the presence of Bi-Sr-Ca-Ga complex oxides in the Ga richer compounds. The electrical and magnetic measurements showed a single step as well as a broadening of the transitions width at an increase of the Ga content. The higher critical current density value (3.8×106 A cm-2 at 5 K for H = 2 KOe and 5.3 × 106 A cm-2 at 5 K H = 2 KOe for x = 0 and x = 0.8, respectively) found in the Ga doped sample has been explained as a direct consequence of a stronger pinning due to the presence of the Ga containing complex oxides.

AB - The preparation and the characterization of the 2212 phase in the Bi2Sr1.7CaGaxCu2-xOy system prepared by a solid- state reaction is reported. The dependence of the thermal, structural and superconducting properties on the Ga content is discussed. XRD data and SEM-EDX observations revealed the presence of Bi-Sr-Ca-Ga complex oxides in the Ga richer compounds. The electrical and magnetic measurements showed a single step as well as a broadening of the transitions width at an increase of the Ga content. The higher critical current density value (3.8×106 A cm-2 at 5 K for H = 2 KOe and 5.3 × 106 A cm-2 at 5 K H = 2 KOe for x = 0 and x = 0.8, respectively) found in the Ga doped sample has been explained as a direct consequence of a stronger pinning due to the presence of the Ga containing complex oxides.

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JO - Physica C: Superconductivity and its Applications

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ER -

Preparation and characterization of the Ga doped Bi-Sr-Ca-Cu-O system

Abstract

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