Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

D. R. Jones; P. Rees; I. Pierce; H. D. Summers

doi:10.1109/3.970910

Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

D. R. Jones, P. Rees, I. Pierce, H. D. Summers

Houston Methodist

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Self-pulsating laser diodes operating at a wavelength of 650 nm are required in optical storage devices. Pulsation can be achieved by including saturable absorbing quantum wells in the p-doped cladding layer of an AlGaInP laser. A rate equation model of this kind of device is used to analyze the power output of the pulses by varying the cavity length and the absorber quantum-well configuration. Results indicate that certain performance tradeoffs occur between the power output and other characteristics that area subject to optical storage device constraints.

Original language	English (US)
Pages (from-to)	1632-1635
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/3.970910
State	Published - Dec 2001

Keywords

Quantum-well lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

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10.1109/3.970910

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abstract = "Self-pulsating laser diodes operating at a wavelength of 650 nm are required in optical storage devices. Pulsation can be achieved by including saturable absorbing quantum wells in the p-doped cladding layer of an AlGaInP laser. A rate equation model of this kind of device is used to analyze the power output of the pulses by varying the cavity length and the absorber quantum-well configuration. Results indicate that certain performance tradeoffs occur between the power output and other characteristics that area subject to optical storage device constraints.",

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Y1 - 2001/12

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AB - Self-pulsating laser diodes operating at a wavelength of 650 nm are required in optical storage devices. Pulsation can be achieved by including saturable absorbing quantum wells in the p-doped cladding layer of an AlGaInP laser. A rate equation model of this kind of device is used to analyze the power output of the pulses by varying the cavity length and the absorber quantum-well configuration. Results indicate that certain performance tradeoffs occur between the power output and other characteristics that area subject to optical storage device constraints.

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KW - Semiconductor lasers

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Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

Abstract

Keywords

ASJC Scopus subject areas

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