Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

D. R. Jones, P. Rees, I. Pierce, H. D. Summers

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Self-pulsating laser diodes operating at a wavelength of 650 nm are required in optical storage devices. Pulsation can be achieved by including saturable absorbing quantum wells in the p-doped cladding layer of an AlGaInP laser. A rate equation model of this kind of device is used to analyze the power output of the pulses by varying the cavity length and the absorber quantum-well configuration. Results indicate that certain performance tradeoffs occur between the power output and other characteristics that area subject to optical storage device constraints.

Original languageEnglish (US)
Pages (from-to)1632-1635
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume37
Issue number12
DOIs
StatePublished - Dec 2001

Keywords

  • Quantum-well lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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