TY - JOUR
T1 - Poly(alkenylsilane sulfone)s as positive electron beam resists for two‐layer systems
AU - Gozdz, Antoni S.
AU - Craighead, Harold G.
AU - Bowdkn, Murrak J.
PY - 1986/9
Y1 - 1986/9
N2 - Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1‐butene have been synthesized by low‐temperature, free radical‐initiated polymerization. The co‐polymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol‐percent ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1.5 °C/cm2 at 20 keV. and their contrast was ∼2. The terpolymers have been used as a top imaging layer in a two‐layer resist system to transfer half‐micron features into a 1.2μm‐thick Novolac planarizing layer by oxygen reactive ion etching (O2, RIE).
AB - Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1‐butene have been synthesized by low‐temperature, free radical‐initiated polymerization. The co‐polymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol‐percent ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1.5 °C/cm2 at 20 keV. and their contrast was ∼2. The terpolymers have been used as a top imaging layer in a two‐layer resist system to transfer half‐micron features into a 1.2μm‐thick Novolac planarizing layer by oxygen reactive ion etching (O2, RIE).
UR - http://www.scopus.com/inward/record.url?scp=84987048648&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84987048648&partnerID=8YFLogxK
U2 - 10.1002/pen.760261609
DO - 10.1002/pen.760261609
M3 - Article
AN - SCOPUS:84987048648
SN - 0032-3888
VL - 26
SP - 1123
EP - 1128
JO - Polymer Engineering & Science
JF - Polymer Engineering & Science
IS - 16
ER -