Abstract
The amplification of picosecond optical pulses in mid-infrared semiconductor lasers was studied using a theoretical model. The effects of gain dispersion, ultrafast nonlinear refraction and short carrier relaxation on characteristics of amplified pulse in time and frequency domains were analyzed. Gain dispersion was found to increase by fast carrier relaxations, short pulse widths and high pulse energy.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Pages | 443-444 |
Number of pages | 2 |
State | Published - Oct 8 2001 |
Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001 |
Other
Other | Conference on Lasers and Electro-Optics (CLEO) |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 5/6/01 → 5/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering