Patterning of hydrogen-passivated Si(100) using Ar(3P0,2) metastable atoms

S. B. Hill, C. A. Haich, F. B. Dunning, G. K. Walters, J. J. McClelland, R. J. Celotta, H. G. Craighead

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We describe the patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine Ni grid in the presence of a small background pressure of oxygen. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allow feature depths ≳20 nm to be realized. With optical manipulation of the incident metastable atoms, this technique could provide the basis for massively parallel nanoscale fabrication on silicon without the use of organic resists.

Original languageEnglish (US)
Pages (from-to)2239-2241
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Apr 12 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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