Abstract
We describe the patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine Ni grid in the presence of a small background pressure of oxygen. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allow feature depths ≳20 nm to be realized. With optical manipulation of the incident metastable atoms, this technique could provide the basis for massively parallel nanoscale fabrication on silicon without the use of organic resists.
Original language | English (US) |
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Pages (from-to) | 2239-2241 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 15 |
DOIs | |
State | Published - Apr 12 1999 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)