Optimization of InGaN narrow stripe self-pulsating laser diodes

D. R. Jones, Paul Rees, I. Pierce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - Jan 1 2000
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: Sep 10 2000Sep 15 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period9/10/009/15/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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