Optimization of InGaN narrow stripe self-pulsating laser diodes

D. R. Jones; Paul Rees; I. Pierce

Optimization of InGaN narrow stripe self-pulsating laser diodes

D. R. Jones, Paul Rees, I. Pierce

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
State	Published - Jan 1 2000
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000

Other

Other	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	9/10/00 → 9/15/00

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

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title = "Optimization of InGaN narrow stripe self-pulsating laser diodes",

abstract = "A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.",

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year = "2000",

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day = "1",

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booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

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note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

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AU - Rees, Paul

AU - Pierce, I.

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N2 - A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.

AB - A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.

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M3 - Conference contribution

AN - SCOPUS:0033697011

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ, United States

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Optimization of InGaN narrow stripe self-pulsating laser diodes

Abstract

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ASJC Scopus subject areas

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