Abstract
A 420 nm narrow stripe self-pulsating laser fabricated in the GaN material system is modelled. This laser structure is optimized for optical storage applications. This is done by optimizing the amount of absorption by varying the cavity length, stripe width and the width of the InGaN quantum wells. The results indicate that the 70 °C threshold can be achieved. Certain trade-offs are necessary to combine high temperature and low threshold current density operations. The reduced gain available in the short wavelength GaN materials results in optimized structure.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Place of Publication | Piscataway, NJ, United States |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
State | Published - Jan 1 2000 |
Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000 |
Other
Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
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City | Nice, France |
Period | 9/10/00 → 9/15/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering