Optimization of 670-nm strained quantum well laser diodes

Peter Smowton; Huw D. Summers; Paul Rees; Peter Blood

Optimization of 670-nm strained quantum well laser diodes

Peter Smowton, Huw D. Summers, Paul Rees, Peter Blood

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

There is increasing interest in the use of visible emitting Ga_xIn_1-xP/(Al_0.5Ga_0.5)_0.52In_0.48P quantum well lasers for optical interconnections using polymer waveguides and this calls for the optimization of device structure for operation at a specific wavelength and usually at an elevated temperature. We concentrate on the mechanisms by which compressive strain modifies the threshold current in a regime where well composition (x) (strain) and quantum well width are adjusted to maintain a transition wavelength of 670 nm. In our model we assume a parabolic band structure, which is a reasonable approximation in this case since strain enhanced splitting of the valence bands is large, and we include the effects of monolayer fluctuations in well width and carrier-carrier scattering (where we calculate an energy and carrier density dependent lifetime). Using our model we examine the relative merits of various well composition (x)/well width combinations.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	P.C. Chen, Lawrence A. Johnson, Henryk Temkin
Publisher	Publ by Society of Photo-Optical Instrumentation Engineers
Pages	189-200
Number of pages	12
Volume	2148
ISBN (Print)	0819414433
State	Published - Dec 1 1994
Event	Laser Diode Technology and Applications VI - Los Angeles, CA, USA Duration: Jan 24 1994 → Jan 26 1994

Other

Other	Laser Diode Technology and Applications VI
City	Los Angeles, CA, USA
Period	1/24/94 → 1/26/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Optimization of 670-nm strained quantum well laser diodes. / Smowton, Peter; Summers, Huw D.; Rees, Paul et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / P.C. Chen; Lawrence A. Johnson; Henryk Temkin. Vol. 2148 Publ by Society of Photo-Optical Instrumentation Engineers, 1994. p. 189-200.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Smowton, P, Summers, HD, Rees, P & Blood, P 1994, Optimization of 670-nm strained quantum well laser diodes. in PC Chen, LA Johnson & H Temkin (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2148, Publ by Society of Photo-Optical Instrumentation Engineers, pp. 189-200, Laser Diode Technology and Applications VI, Los Angeles, CA, USA, 1/24/94.

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Optimization of 670-nm strained quantum well laser diodes

Abstract

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ASJC Scopus subject areas

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