Optimization of 670-nm strained quantum well laser diodes

Peter Smowton, Huw D. Summers, Paul Rees, Peter Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

There is increasing interest in the use of visible emitting GaxIn1-xP/(Al 0.5Ga0.5)0.52In0.48P quantum well lasers for optical interconnections using polymer waveguides and this calls for the optimization of device structure for operation at a specific wavelength and usually at an elevated temperature. We concentrate on the mechanisms by which compressive strain modifies the threshold current in a regime where well composition (x) (strain) and quantum well width are adjusted to maintain a transition wavelength of 670 nm. In our model we assume a parabolic band structure, which is a reasonable approximation in this case since strain enhanced splitting of the valence bands is large, and we include the effects of monolayer fluctuations in well width and carrier-carrier scattering (where we calculate an energy and carrier density dependent lifetime). Using our model we examine the relative merits of various well composition (x)/well width combinations.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsP.C. Chen, Lawrence A. Johnson, Henryk Temkin
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages189-200
Number of pages12
Volume2148
ISBN (Print)0819414433
StatePublished - Dec 1 1994
EventLaser Diode Technology and Applications VI - Los Angeles, CA, USA
Duration: Jan 24 1994Jan 26 1994

Other

OtherLaser Diode Technology and Applications VI
CityLos Angeles, CA, USA
Period1/24/941/26/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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