Optical properties of silicon doped ZnO

R. Chowdhury, S. Adhikari, Paul Rees

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

We have calculated the optical structure of wurtzite ZnO doped with Silicon (Si). The calculations are based on the density functional theory with the generalized gradient approximation (GGA) and the projector augmented wave pseudopotentials. The GGA with the Perdew Burke Ernzerhof exchange-correlation functional are employed in the simulations. Ultrasoft pseudopotentials are utilized for the geometry optimization to render the computations tractable as well as to enhance the efficiency. We investigate two kinds of defects in ZnO, namely the substitution of Zn by Si and O by Si. The optical properties, including dielectric function, reflectivity and absorption coefficient of wurtzite ZnO are calculated. The variation in the band gap and energetics have been validated against published results. The dielectric properties follow a steep decreasing trend for the low energy level. In addition, the reflectivity and absorption coefficients reduce abruptly due to the doping.

Original languageEnglish (US)
Pages (from-to)4763-4767
Number of pages5
JournalPhysica B: Condensed Matter
Volume405
Issue number23
DOIs
StatePublished - Dec 1 2010

Keywords

  • First principles
  • Optical properties
  • Wurtzite ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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