Abstract
Direct measurements of the optical loss and gain of structures employing multiple layers of quantum dot lasers were presented. The layers of InGaAs quantum dots embedded in GaAs quantum wells along with adjustable thickness AlGaAs waveguides were used in the structures. The results revealed that the optical mode loss was independent of the number of quantum dot layers. It was also found that the quantum dot active regions proved to be useful for higher loss structures applications.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Pages | 354-355 |
Number of pages | 2 |
State | Published - Oct 8 2001 |
Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001 |
Other
Other | Conference on Lasers and Electro-Optics (CLEO) |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 5/6/01 → 5/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering