Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

F. P. Logue; D. T. Fewer; S. J. Hewlett; J. F. Heffernan; C. Jordan; P. Rees; J. F. Donegan; E. M. McCabe; J. Hegarty; S. Taniguchi; T. Hino; K. Nakano; A. Ishibashi

doi:10.1063/1.364094

Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

F. P. Logue, D. T. Fewer, S. J. Hewlett, J. F. Heffernan, C. Jordan, P. Rees, J. F. Donegan, E. M. McCabe, J. Hegarty, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi

Houston Methodist

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn_0.75Cd_0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X10¹⁸ cm^-3 and we deduce an ambipolar diffusion constant of 1.7 cm² s^-1.

Original language	English (US)
Pages (from-to)	536-538
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.364094
State	Published - Jan 1 1997

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well",

abstract = "We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.",

author = "Logue, \{F. P.\} and Fewer, \{D. T.\} and Hewlett, \{S. J.\} and Heffernan, \{J. F.\} and C. Jordan and P. Rees and Donegan, \{J. F.\} and McCabe, \{E. M.\} and J. Hegarty and S. Taniguchi and T. Hino and K. Nakano and A. Ishibashi",

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T1 - Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

AU - Logue, F. P.

AU - Fewer, D. T.

AU - Hewlett, S. J.

AU - Heffernan, J. F.

AU - Jordan, C.

AU - Rees, P.

AU - Donegan, J. F.

AU - McCabe, E. M.

AU - Hegarty, J.

AU - Taniguchi, S.

AU - Hino, T.

AU - Nakano, K.

AU - Ishibashi, A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.

AB - We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.

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JO - Journal of Applied Physics

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Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

Abstract

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