Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

F. P. Logue; D. T. Fewer; S. J. Hewlett; J. F. Heffernan; C. Jordan; P. Rees; J. F. Donegan; E. M. McCabe; J. Hegarty; S. Taniguchi; T. Hino; K. Nakano; A. Ishibashi

doi:10.1063/1.364094

Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

F. P. Logue, D. T. Fewer, S. J. Hewlett, J. F. Heffernan, C. Jordan, P. Rees, J. F. Donegan, E. M. McCabe, J. Hegarty, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi

Houston Methodist

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn_0.75Cd_0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X10¹⁸ cm^-3 and we deduce an ambipolar diffusion constant of 1.7 cm² s^-1.

Original language	English (US)
Pages (from-to)	536-538
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.364094
State	Published - Jan 1 1997

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.364094

Cite this

@article{5d04099af5bb4d70841613ea20200e00,

title = "Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well",

abstract = "We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.",

author = "Logue, {F. P.} and Fewer, {D. T.} and Hewlett, {S. J.} and Heffernan, {J. F.} and C. Jordan and P. Rees and Donegan, {J. F.} and McCabe, {E. M.} and J. Hegarty and S. Taniguchi and T. Hino and K. Nakano and A. Ishibashi",

year = "1997",

month = jan,

day = "1",

doi = "10.1063/1.364094",

language = "English (US)",

volume = "81",

pages = "536--538",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

AU - Logue, F. P.

AU - Fewer, D. T.

AU - Hewlett, S. J.

AU - Heffernan, J. F.

AU - Jordan, C.

AU - Rees, P.

AU - Donegan, J. F.

AU - McCabe, E. M.

AU - Hegarty, J.

AU - Taniguchi, S.

AU - Hino, T.

AU - Nakano, K.

AU - Ishibashi, A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.

AB - We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.

UR - http://www.scopus.com/inward/record.url?scp=0012293639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012293639&partnerID=8YFLogxK

U2 - 10.1063/1.364094

DO - 10.1063/1.364094

M3 - Article

AN - SCOPUS:0012293639

SN - 0021-8979

VL - 81

SP - 536

EP - 538

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this