Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

F. P. Logue, D. T. Fewer, S. J. Hewlett, J. F. Heffernan, C. Jordan, P. Rees, J. F. Donegan, E. M. McCabe, J. Hegarty, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ∼500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se-ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ∼1X1018 cm-3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s-1.

Original languageEnglish (US)
Pages (from-to)536-538
Number of pages3
JournalJournal of Applied Physics
Volume81
Issue number1
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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