Optical gain in ZnCdSe-ZnSe quantum well structures

Paul Rees, J. F. Heffernan, F. P. Logue, J. F. Donegan, C. Jordan, J. Hegarty, S. Taniguchi, T. Hino, F. Hiei, A. Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnSe-ZnCdSe quantum well structures are the most likely candidate for the fabrication of commercial blue-green semiconductor lasers. Devices incorporating these wells have achieved room temperature cw lasing at 510nm with operating lifetimes of up to 100 hours. In this paper, the gain spectra of optically pumped ZnCdSe-ZnSe multiple quantum wells is measured over a range of temperatures and intensities. The calculation, which includes many body effects such as Coulomb enhancement and spectral broadening due to carrier scattering, gives excellent agreement with the experimental gain measurements.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Editors Anon
StatePublished - Jan 1 1996
EventProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger
Duration: Sep 8 1996Sep 13 1996

Other

OtherProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
CityHamburg, Ger
Period9/8/969/13/96

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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