Optical gain calculations for near-infra-red intersubband semiconductor lasers

C. Y L Cheung, Paul Rees, K. A. Shore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The basic requisite for exploiting the transitions in the design of a near-infrared (NIR) intersubband semiconductor laser is the demonstration that electron energy state lifetimes can be engineered to permit the creation of a population inversion and hence that sufficient optical gain can be provided by NIR intersubband transitions. This article reports an analysis of the state lifetimes and optical gain appropriate to intersubband emission at a wavelength of 1.55μm in a coupled quantum well system. It is shown that, under identified operating conditions, an optical gain of order 500 cm-1 can be obtained in such structures.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - Jan 1 1998
EventProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
Duration: Sep 14 1998Sep 18 1998

Other

OtherProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period9/14/989/18/98

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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