Abstract
The basic requisite for exploiting the transitions in the design of a near-infrared (NIR) intersubband semiconductor laser is the demonstration that electron energy state lifetimes can be engineered to permit the creation of a population inversion and hence that sufficient optical gain can be provided by NIR intersubband transitions. This article reports an analysis of the state lifetimes and optical gain appropriate to intersubband emission at a wavelength of 1.55μm in a coupled quantum well system. It is shown that, under identified operating conditions, an optical gain of order 500 cm-1 can be obtained in such structures.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Place of Publication | Piscataway, NJ, United States |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
State | Published - Jan 1 1998 |
Event | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: Sep 14 1998 → Sep 18 1998 |
Other
Other | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 |
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City | Glasgow, Scotland |
Period | 9/14/98 → 9/18/98 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering