Optical gain calculations for near-infra-red intersubband semiconductor lasers

C. Y L Cheung; Paul Rees; K. A. Shore

Optical gain calculations for near-infra-red intersubband semiconductor lasers

C. Y L Cheung, Paul Rees, K. A. Shore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The basic requisite for exploiting the transitions in the design of a near-infrared (NIR) intersubband semiconductor laser is the demonstration that electron energy state lifetimes can be engineered to permit the creation of a population inversion and hence that sufficient optical gain can be provided by NIR intersubband transitions. This article reports an analysis of the state lifetimes and optical gain appropriate to intersubband emission at a wavelength of 1.55μm in a coupled quantum well system. It is shown that, under identified operating conditions, an optical gain of order 500 cm^-1 can be obtained in such structures.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
State	Published - Jan 1 1998
Event	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: Sep 14 1998 → Sep 18 1998

Other

Other	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	9/14/98 → 9/18/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Optical gain calculations for near-infra-red intersubband semiconductor lasers. / Cheung, C. Y L; Rees, Paul; Shore, K. A.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States : Institute of Electrical and Electronics Engineers Inc., 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheung, CYL, Rees, P & Shore, KA 1998, Optical gain calculations for near-infra-red intersubband semiconductor lasers. in Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States, Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, 9/14/98.

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AB - The basic requisite for exploiting the transitions in the design of a near-infrared (NIR) intersubband semiconductor laser is the demonstration that electron energy state lifetimes can be engineered to permit the creation of a population inversion and hence that sufficient optical gain can be provided by NIR intersubband transitions. This article reports an analysis of the state lifetimes and optical gain appropriate to intersubband emission at a wavelength of 1.55μm in a coupled quantum well system. It is shown that, under identified operating conditions, an optical gain of order 500 cm-1 can be obtained in such structures.

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Optical gain calculations for near-infra-red intersubband semiconductor lasers

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ASJC Scopus subject areas

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