Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer

Graham Berry; Huw D. Summers; Peter Blood; Paul Claisse; Michael Lebby

Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer

Graham Berry, Huw D. Summers, Peter Blood, Paul Claisse, Michael Lebby

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report an experimental and theoretical analysis of optical bi-stability in vertical cavity surface emitting laser diodes containing an intra-cavity saturable epitaxial absorber layer in the top distributed Bragg reflector.

Original language	English (US)
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Editors	Anon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	111-112
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: Oct 4 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC
City	Nara, Jpn
Period	10/4/98 → 10/8/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer. / Berry, Graham; Summers, Huw D.; Blood, Peter et al.
Conference Digest - IEEE International Semiconductor Laser Conference. ed. / Anon. Institute of Electrical and Electronics Engineers Inc., 1998. p. 111-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Berry, G, Summers, HD, Blood, P, Claisse, P & Lebby, M 1998, Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer. in Anon (ed.), Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., pp. 111-112, Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC, Nara, Jpn, 10/4/98.

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title = "Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer",

abstract = "We report an experimental and theoretical analysis of optical bi-stability in vertical cavity surface emitting laser diodes containing an intra-cavity saturable epitaxial absorber layer in the top distributed Bragg reflector.",

author = "Graham Berry and Summers, {Huw D.} and Peter Blood and Paul Claisse and Michael Lebby",

year = "1998",

language = "English (US)",

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editor = "Anon",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

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note = "Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC ; Conference date: 04-10-1998 Through 08-10-1998",

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AU - Berry, Graham

AU - Summers, Huw D.

AU - Blood, Peter

AU - Claisse, Paul

AU - Lebby, Michael

PY - 1998

Y1 - 1998

N2 - We report an experimental and theoretical analysis of optical bi-stability in vertical cavity surface emitting laser diodes containing an intra-cavity saturable epitaxial absorber layer in the top distributed Bragg reflector.

AB - We report an experimental and theoretical analysis of optical bi-stability in vertical cavity surface emitting laser diodes containing an intra-cavity saturable epitaxial absorber layer in the top distributed Bragg reflector.

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M3 - Conference contribution

AN - SCOPUS:0032317570

SP - 111

EP - 112

BT - Conference Digest - IEEE International Semiconductor Laser Conference

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC

Y2 - 4 October 1998 through 8 October 1998

ER -

Optical bi-stability in vertical cavity surface emitting lasers with a simple intra-cavity epitaxial absorber layer

Abstract

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ASJC Scopus subject areas

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