Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes

G. B. Ren, H. Summers, P. Blood, R. Perks, D. Bour

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime (τ nr) in InGaN LEDs by analysis of the light current characteristics. We find that the values of τ nr decrease from 18ns at 200K to 5ns at 400K. This behaviour is thermally activated with an activation energy of 40meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalisation of carriers from potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52% and 65% at room temperature over the current range employed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsY. Arakawa, P. Blood, M. Osinski
Number of pages7
StatePublished - 2001
EventPhysics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States
Duration: Jan 22 2001Jan 26 2001


OtherPhysics and Simulation of Optoelectronic Devices IX
Country/TerritoryUnited States
CitySan Jose, CA


  • Blue-LEDs
  • Gallium nitride
  • Non-radiative lifetime
  • Quantum efficiency

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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