Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes

G. B. Ren; H. Summers; P. Blood; R. Perks; D. Bour

doi:10.1117/12.432626

Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes

G. B. Ren, H. Summers, P. Blood, R. Perks, D. Bour

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime (τ _nr) in InGaN LEDs by analysis of the light current characteristics. We find that the values of τ _nr decrease from 18ns at 200K to 5ns at 400K. This behaviour is thermally activated with an activation energy of 40meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalisation of carriers from potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52% and 65% at room temperature over the current range employed.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Y. Arakawa, P. Blood, M. Osinski
Pages	78-84
Number of pages	7
Volume	4283
DOIs	https://doi.org/10.1117/12.432626
State	Published - 2001
Event	Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: Jan 22 2001 → Jan 26 2001

Other

Other	Physics and Simulation of Optoelectronic Devices IX
Country/Territory	United States
City	San Jose, CA
Period	1/22/01 → 1/26/01

Keywords

Blue-LEDs
Gallium nitride
Non-radiative lifetime
Quantum efficiency

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.432626

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Ren, GB, Summers, H, Blood, P, Perks, R & Bour, D 2001, Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes. in Y Arakawa, P Blood & M Osinski (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4283, pp. 78-84, Physics and Simulation of Optoelectronic Devices IX, San Jose, CA, United States, 1/22/01. https://doi.org/10.1117/12.432626

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title = "Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes",

abstract = "The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime (τ nr) in InGaN LEDs by analysis of the light current characteristics. We find that the values of τ nr decrease from 18ns at 200K to 5ns at 400K. This behaviour is thermally activated with an activation energy of 40meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalisation of carriers from potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52% and 65% at room temperature over the current range employed. ",

keywords = "Blue-LEDs, Gallium nitride, Non-radiative lifetime, Quantum efficiency",

author = "Ren, {G. B.} and H. Summers and P. Blood and R. Perks and D. Bour",

year = "2001",

doi = "10.1117/12.432626",

language = "English (US)",

volume = "4283",

pages = "78--84",

editor = "Y. Arakawa and P. Blood and M. Osinski",

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note = "Physics and Simulation of Optoelectronic Devices IX ; Conference date: 22-01-2001 Through 26-01-2001",

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T1 - Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes

AU - Ren, G. B.

AU - Summers, H.

AU - Blood, P.

AU - Perks, R.

AU - Bour, D.

PY - 2001

Y1 - 2001

N2 - The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime (τ nr) in InGaN LEDs by analysis of the light current characteristics. We find that the values of τ nr decrease from 18ns at 200K to 5ns at 400K. This behaviour is thermally activated with an activation energy of 40meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalisation of carriers from potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52% and 65% at room temperature over the current range employed.

AB - The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime (τ nr) in InGaN LEDs by analysis of the light current characteristics. We find that the values of τ nr decrease from 18ns at 200K to 5ns at 400K. This behaviour is thermally activated with an activation energy of 40meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalisation of carriers from potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52% and 65% at room temperature over the current range employed.

KW - Blue-LEDs

KW - Gallium nitride

KW - Non-radiative lifetime

KW - Quantum efficiency

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U2 - 10.1117/12.432626

DO - 10.1117/12.432626

M3 - Conference contribution

AN - SCOPUS:0034778781

VL - 4283

SP - 78

EP - 84

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Arakawa, Y.

A2 - Blood, P.

A2 - Osinski, M.

T2 - Physics and Simulation of Optoelectronic Devices IX

Y2 - 22 January 2001 through 26 January 2001

ER -

Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes

Abstract

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Keywords

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