New types of unstable step-flow growth on Si(111)-(7×7) during molecular beam epitaxy: Scaling and universality

Hiroo Omi; Yoshikazu Homma; Vesselin Tonchev; Alberto Pimpinelli

doi:10.1103/PhysRevLett.95.216101

New types of unstable step-flow growth on Si(111)-(7×7) during molecular beam epitaxy: Scaling and universality

Hiroo Omi, Yoshikazu Homma, Vesselin Tonchev, Alberto Pimpinelli

Houston Methodist

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

New types of unstable homoepitaxial growth of vicinal Si(111)-(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775°C and one type of simultaneous bunching and meandering at 800°C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.

Original language	English (US)
Article number	216101
Journal	Physical Review Letters
Volume	95
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.95.216101
State	Published - Nov 18 2005

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.95.216101

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abstract = "New types of unstable homoepitaxial growth of vicinal Si(111)-(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775°C and one type of simultaneous bunching and meandering at 800°C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.",

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AB - New types of unstable homoepitaxial growth of vicinal Si(111)-(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775°C and one type of simultaneous bunching and meandering at 800°C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.

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New types of unstable step-flow growth on Si(111)-(7×7) during molecular beam epitaxy: Scaling and universality

Abstract

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