New types of unstable step-flow growth on Si(111)-(7×7) during molecular beam epitaxy: Scaling and universality

Hiroo Omi, Yoshikazu Homma, Vesselin Tonchev, Alberto Pimpinelli

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

New types of unstable homoepitaxial growth of vicinal Si(111)-(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775°C and one type of simultaneous bunching and meandering at 800°C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.

Original languageEnglish (US)
Article number216101
JournalPhysical Review Letters
Volume95
Issue number21
DOIs
StatePublished - Nov 18 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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