New types of unstable homoepitaxial growth of vicinal Si(111)-(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775°C and one type of simultaneous bunching and meandering at 800°C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.
|Original language||English (US)|
|Journal||Physical Review Letters|
|State||Published - Nov 18 2005|
ASJC Scopus subject areas
- Physics and Astronomy(all)