TY - JOUR
T1 - New model of morphological instabilities during epitaxial growth
T2 - From step bunching to mounds formation
AU - Vladimirova, Masha
AU - Pimpinelli, Alberto
AU - Videcoq, Arnaud
PY - 2000/12
Y1 - 2000/12
N2 - A novel species model of epitaxial growth, that predicts step bunching on vicinal surfaces, under appropriate conditions, as it is observed during molecular beam epitaxy and chemical vapor epitaxy growth of GaAs was investigated. The model exhibits a rich variety of unstable surface morphologies, ranging from mounding to step meandering and passing through step bunching, when external parameters are varied. The epitaxial growth model is only one that predicts the occurrence of a step meandering and a step bunching instability in the same system, when just positive Ehrlich-Schwoebel barriers at step edges are assumed.
AB - A novel species model of epitaxial growth, that predicts step bunching on vicinal surfaces, under appropriate conditions, as it is observed during molecular beam epitaxy and chemical vapor epitaxy growth of GaAs was investigated. The model exhibits a rich variety of unstable surface morphologies, ranging from mounding to step meandering and passing through step bunching, when external parameters are varied. The epitaxial growth model is only one that predicts the occurrence of a step meandering and a step bunching instability in the same system, when just positive Ehrlich-Schwoebel barriers at step edges are assumed.
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U2 - 10.1016/S0022-0248(00)00878-2
DO - 10.1016/S0022-0248(00)00878-2
M3 - Article
AN - SCOPUS:0034498083
VL - 220
SP - 631
EP - 636
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -