New model of morphological instabilities during epitaxial growth: From step bunching to mounds formation

Masha Vladimirova, Alberto Pimpinelli, Arnaud Videcoq

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

A novel species model of epitaxial growth, that predicts step bunching on vicinal surfaces, under appropriate conditions, as it is observed during molecular beam epitaxy and chemical vapor epitaxy growth of GaAs was investigated. The model exhibits a rich variety of unstable surface morphologies, ranging from mounding to step meandering and passing through step bunching, when external parameters are varied. The epitaxial growth model is only one that predicts the occurrence of a step meandering and a step bunching instability in the same system, when just positive Ehrlich-Schwoebel barriers at step edges are assumed.

Original languageEnglish (US)
Pages (from-to)631-636
Number of pages6
JournalJournal of Crystal Growth
Volume220
Issue number4
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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