Nanomechanical resonant structures in silicon nitride: Fabrication, operation and dissipation issues

L. Sekaric; D. W. Carr; S. Evoy; J. M. Parpia; H. G. Craighead

doi:10.1016/S0924-4247(02)00149-8

Nanomechanical resonant structures in silicon nitride: Fabrication, operation and dissipation issues

L. Sekaric, D. W. Carr, S. Evoy, J. M. Parpia, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50 nm. The measured resonant frequencies of these devices (8.5-171 MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.

Original language	English (US)
Pages (from-to)	215-219
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	101
Issue number	1-2
DOIs	https://doi.org/10.1016/S0924-4247(02)00149-8
State	Published - Sep 30 2002

Keywords

Dissipation
Mechanical quality factor
Nanomechanics
Silicon nitride

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering
Instrumentation

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10.1016/S0924-4247(02)00149-8

Cite this

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title = "Nanomechanical resonant structures in silicon nitride: Fabrication, operation and dissipation issues",

abstract = "We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50 nm. The measured resonant frequencies of these devices (8.5-171 MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.",

keywords = "Dissipation, Mechanical quality factor, Nanomechanics, Silicon nitride",

author = "L. Sekaric and Carr, {D. W.} and S. Evoy and Parpia, {J. M.} and Craighead, {H. G.}",

note = "Funding Information: This work was supported by the Cornell Center for Materials Research (CCMR), a Materials Research Science and Engineering Center of the National Science Foundation (DMR-0079992). All of the fabrication was performed at the Cornell Nanofabrication Facility, also funded by the National Science Foundation. The authors would like to thank Kevin Yasumura for many useful discussions. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

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T2 - Fabrication, operation and dissipation issues

AU - Sekaric, L.

AU - Carr, D. W.

AU - Evoy, S.

AU - Parpia, J. M.

AU - Craighead, H. G.

N1 - Funding Information: This work was supported by the Cornell Center for Materials Research (CCMR), a Materials Research Science and Engineering Center of the National Science Foundation (DMR-0079992). All of the fabrication was performed at the Cornell Nanofabrication Facility, also funded by the National Science Foundation. The authors would like to thank Kevin Yasumura for many useful discussions. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2002/9/30

Y1 - 2002/9/30

N2 - We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50 nm. The measured resonant frequencies of these devices (8.5-171 MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.

AB - We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50 nm. The measured resonant frequencies of these devices (8.5-171 MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.

KW - Dissipation

KW - Mechanical quality factor

KW - Nanomechanics

KW - Silicon nitride

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Nanomechanical resonant structures in silicon nitride: Fabrication, operation and dissipation issues

Abstract

Keywords

ASJC Scopus subject areas

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