Nanomechanical resonant structures in silicon nitride: Fabrication, operation and dissipation issues

L. Sekaric, D. W. Carr, S. Evoy, J. M. Parpia, H. G. Craighead

Research output: Contribution to journalArticle

72 Scopus citations

Abstract

We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50 nm. The measured resonant frequencies of these devices (8.5-171 MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.

Original languageEnglish (US)
Pages (from-to)215-219
Number of pages5
JournalSensors and Actuators, A: Physical
Volume101
Issue number1-2
DOIs
StatePublished - Sep 30 2002

Keywords

  • Dissipation
  • Mechanical quality factor
  • Nanomechanics
  • Silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

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