Abstract
The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.
Original language | English (US) |
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Pages (from-to) | 173-174 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 234-236 |
DOIs | |
State | Published - Jun 2 1997 |
Keywords
- Diffusion
- Nanoscale objects
- Quasielastic scattering
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering