Mobility of Ga confined in nanostructured alumina

H. Konrad, Christof Karmonik, J. Weissmüller, H. Gleiter, R. Birringer, R. Hempelmann

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.

Original languageEnglish (US)
Pages (from-to)173-174
Number of pages2
JournalPhysica B: Condensed Matter
Volume234-236
DOIs
StatePublished - Jun 2 1997

Keywords

  • Diffusion
  • Nanoscale objects
  • Quasielastic scattering
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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