Mobility of Ga confined in nanostructured alumina

H. Konrad; C. Karmonik; J. Weissmüller; H. Gleiter; R. Birringer; R. Hempelmann

doi:10.1016/S0921-4526(96)00941-6

Mobility of Ga confined in nanostructured alumina

H. Konrad, C. Karmonik, J. Weissmüller, H. Gleiter, R. Birringer, R. Hempelmann

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.

Original language	English (US)
Pages (from-to)	173-174
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	234-236
DOIs	https://doi.org/10.1016/S0921-4526(96)00941-6
State	Published - Jun 2 1997

Keywords

Diffusion
Nanoscale objects
Quasielastic scattering
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(96)00941-6

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abstract = "The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.",

keywords = "Diffusion, Nanoscale objects, Quasielastic scattering, Thin films",

author = "H. Konrad and C. Karmonik and J. Weissm{\"u}ller and H. Gleiter and R. Birringer and R. Hempelmann",

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T1 - Mobility of Ga confined in nanostructured alumina

AU - Konrad, H.

AU - Karmonik, C.

AU - Weissmüller, J.

AU - Gleiter, H.

AU - Birringer, R.

AU - Hempelmann, R.

PY - 1997/6/2

Y1 - 1997/6/2

N2 - The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.

AB - The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near Tm part of the Ga film is molten whereas about six monolayers remain solid even 20 K above Tm. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.

KW - Diffusion

KW - Nanoscale objects

KW - Quasielastic scattering

KW - Thin films

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M3 - Article

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VL - 234-236

SP - 173

EP - 174

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -

Mobility of Ga confined in nanostructured alumina

Abstract

Keywords

ASJC Scopus subject areas

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