Matrials science: On-wire lithography

Lidong Qin; Sungho Park; Ling Huang; Chad A. Mirkin

doi:10.1126/science.1112666

Matrials science: On-wire lithography

Lidong Qin, Sungho Park, Ling Huang, Chad A. Mirkin

Academic Institute

Research output: Contribution to journal › Article › peer-review

362 Scopus citations

Abstract

We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in template-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanolithography.

Original language	English (US)
Pages (from-to)	113-115
Number of pages	3
Journal	Science
Volume	309
Issue number	5731
DOIs	https://doi.org/10.1126/science.1112666
State	Published - Jul 1 2005

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title = "Matrials science: On-wire lithography",

abstract = "We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in template-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanolithography.",

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AU - Huang, Ling

AU - Mirkin, Chad A.

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N2 - We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in template-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanolithography.

AB - We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in template-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanolithography.

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Matrials science: On-wire lithography

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