Abstract
We report conductance and magnetoconductance measurements on narrow silicon inversion layers 40-200 nm wide, with mobilities of 1000-5000 cm2 V · s at 2 K. At high magnetic fields Shubnikov-De Haas oscillations are observed, but at zero field there still is pronounced structure in the conductance versus electron density, with irregular spacings roughly that expected from quantum confinement ("particle in a box") associated with the lithographically defined width.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 14-18 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 142 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Jul 1 1984 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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