Magnetoconductance and quantized confinement in narrow silicon inversion layers

W. J. Skocpol, L. D. Jackel, R. E. Howard, H. G. Craighead, L. A. Fetter, P. M. Mankiewich, P. Grabbe, D. M. Tennant

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


We report conductance and magnetoconductance measurements on narrow silicon inversion layers 40-200 nm wide, with mobilities of 1000-5000 cm2 V · s at 2 K. At high magnetic fields Shubnikov-De Haas oscillations are observed, but at zero field there still is pronounced structure in the conductance versus electron density, with irregular spacings roughly that expected from quantum confinement ("particle in a box") associated with the lithographically defined width.

Original languageEnglish (US)
Pages (from-to)14-18
Number of pages5
JournalSurface Science
Issue number1-3
StatePublished - Jul 1 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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