Low voltage electron beam lithography in PMMA

A. Olkhovets; H. G. Craighead

doi:10.1116/1.590762

Low voltage electron beam lithography in PMMA

A. Olkhovets, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have studied low voltage (1-2 kV) electron beam lithography processes in PMMA and compared them to conventional high voltage processing. We looked at the deposited metal after liftoff as well as directly imaging resist profiles by atomic force microscopy. As expected, the proximity effects were greatly reduced. The forward scattering was found to increase at low voltage. The study of developed resist profiles showed that linewidth versus dose has a single Gaussian functional form, proving that forward scattering plays the major role in line broadening. The effective Gaussian linewidth is 60 nm at 1 kV in a 50 nm resist layer. Modeling of the lithographic process showed a significant increase in resolution and process latitude for thinner resists.

Original language	English (US)
Pages (from-to)	1366-1370
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.590762
State	Published - 1999

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We have studied low voltage (1-2 kV) electron beam lithography processes in PMMA and compared them to conventional high voltage processing. We looked at the deposited metal after liftoff as well as directly imaging resist profiles by atomic force microscopy. As expected, the proximity effects were greatly reduced. The forward scattering was found to increase at low voltage. The study of developed resist profiles showed that linewidth versus dose has a single Gaussian functional form, proving that forward scattering plays the major role in line broadening. The effective Gaussian linewidth is 60 nm at 1 kV in a 50 nm resist layer. Modeling of the lithographic process showed a significant increase in resolution and process latitude for thinner resists.",

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AU - Craighead, H. G.

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AB - We have studied low voltage (1-2 kV) electron beam lithography processes in PMMA and compared them to conventional high voltage processing. We looked at the deposited metal after liftoff as well as directly imaging resist profiles by atomic force microscopy. As expected, the proximity effects were greatly reduced. The forward scattering was found to increase at low voltage. The study of developed resist profiles showed that linewidth versus dose has a single Gaussian functional form, proving that forward scattering plays the major role in line broadening. The effective Gaussian linewidth is 60 nm at 1 kV in a 50 nm resist layer. Modeling of the lithographic process showed a significant increase in resolution and process latitude for thinner resists.

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Low voltage electron beam lithography in PMMA

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