Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy; C. K. Harnett; Harold G. Craighead; T. J. Eustis; W. A. Davis; M. J. Murphy; W. J. Schaff; L. F. Eastman

Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy, C. K. Harnett, Harold G. Craighead, T. J. Eustis, W. A. Davis, M. J. Murphy, W. J. Schaff, L. F. Eastman

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 10¹⁸ to 10¹⁹ cm^-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Editors	Anon
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
State	Published - Jan 1 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Other

Other	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	5/3/98 → 5/8/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Low-temperature scanning tunneling microscope-induced luminescence of GaN. / Evoy, S.; Harnett, C. K.; Craighead, Harold G. et al.
Conference on Lasers and Electro-Optics Europe - Technical Digest. ed. / Anon. Piscataway, NJ, United States: Institute of Electrical and Electronics Engineers Inc., 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Evoy, S, Harnett, CK, Craighead, HG, Eustis, TJ, Davis, WA, Murphy, MJ, Schaff, WJ & Eastman, LF 1998, Low-temperature scanning tunneling microscope-induced luminescence of GaN. in Anon (ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States, Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, 5/3/98.

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title = "Low-temperature scanning tunneling microscope-induced luminescence of GaN",

abstract = "Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.",

author = "S. Evoy and Harnett, \{C. K.\} and Craighead, \{Harold G.\} and Eustis, \{T. J.\} and Davis, \{W. A.\} and Murphy, \{M. J.\} and Schaff, \{W. J.\} and Eastman, \{L. F.\}",

year = "1998",

month = jan,

day = "1",

language = "English",

editor = "Anon",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 03-05-1998 Through 08-05-1998",

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TY - GEN

T1 - Low-temperature scanning tunneling microscope-induced luminescence of GaN

AU - Evoy, S.

AU - Harnett, C. K.

AU - Craighead, Harold G.

AU - Eustis, T. J.

AU - Davis, W. A.

AU - Murphy, M. J.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

AB - Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

UR - https://www.scopus.com/pages/publications/0031617977

UR - https://www.scopus.com/inward/citedby.url?scp=0031617977&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031617977

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 3 May 1998 through 8 May 1998

ER -

Low-temperature scanning tunneling microscope-induced luminescence of GaN

Abstract

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ASJC Scopus subject areas

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