Low temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy; C. K. Harnett; H. G. Craighead; T. J. Eustis; W. A. Davis; M. J. Murphy; W. J. Schaff; L. F. Eastman

doi:10.1116/1.590112

Low temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy, C. K. Harnett, H. G. Craighead, T. J. Eustis, W. A. Davis, M. J. Murphy, W. J. Schaff, L. F. Eastman

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7 Scopus citations

Abstract

We report the low temperature scanning tunneling microscope-induced luminescence of molecular beam epitaxy grown α-GaN. Semiquantitative spectroscopic analysis suggests near band edge emission, as well as emission covering the rest of the visible range. The relative intensity of band edge emission increases by one order of magnitude under liquid helium cooling. We also report the first photon emission images of GaN obtained with this technique. These images reveal stronger band edge emission at the center of crystallites. This study is complemented with a scanning electron microscope-induced cathodoluminescence analysis. Cathodoluminescence is dominated by the hexagonal (D°, X) transition and reveals evidence of small quantities of the cubic phase.

Original language	English (US)
Pages (from-to)	1943-1947
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	4
DOIs	https://doi.org/10.1116/1.590112
State	Published - 1998

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Low temperature scanning tunneling microscope-induced luminescence of GaN",

abstract = "We report the low temperature scanning tunneling microscope-induced luminescence of molecular beam epitaxy grown α-GaN. Semiquantitative spectroscopic analysis suggests near band edge emission, as well as emission covering the rest of the visible range. The relative intensity of band edge emission increases by one order of magnitude under liquid helium cooling. We also report the first photon emission images of GaN obtained with this technique. These images reveal stronger band edge emission at the center of crystallites. This study is complemented with a scanning electron microscope-induced cathodoluminescence analysis. Cathodoluminescence is dominated by the hexagonal (D°, X) transition and reveals evidence of small quantities of the cubic phase.",

author = "S. Evoy and Harnett, {C. K.} and Craighead, {H. G.} and Eustis, {T. J.} and Davis, {W. A.} and Murphy, {M. J.} and Schaff, {W. J.} and Eastman, {L. F.}",

year = "1998",

doi = "10.1116/1.590112",

language = "English (US)",

volume = "16",

pages = "1943--1947",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Low temperature scanning tunneling microscope-induced luminescence of GaN

AU - Evoy, S.

AU - Harnett, C. K.

AU - Craighead, H. G.

AU - Eustis, T. J.

AU - Davis, W. A.

AU - Murphy, M. J.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 1998

Y1 - 1998

N2 - We report the low temperature scanning tunneling microscope-induced luminescence of molecular beam epitaxy grown α-GaN. Semiquantitative spectroscopic analysis suggests near band edge emission, as well as emission covering the rest of the visible range. The relative intensity of band edge emission increases by one order of magnitude under liquid helium cooling. We also report the first photon emission images of GaN obtained with this technique. These images reveal stronger band edge emission at the center of crystallites. This study is complemented with a scanning electron microscope-induced cathodoluminescence analysis. Cathodoluminescence is dominated by the hexagonal (D°, X) transition and reveals evidence of small quantities of the cubic phase.

AB - We report the low temperature scanning tunneling microscope-induced luminescence of molecular beam epitaxy grown α-GaN. Semiquantitative spectroscopic analysis suggests near band edge emission, as well as emission covering the rest of the visible range. The relative intensity of band edge emission increases by one order of magnitude under liquid helium cooling. We also report the first photon emission images of GaN obtained with this technique. These images reveal stronger band edge emission at the center of crystallites. This study is complemented with a scanning electron microscope-induced cathodoluminescence analysis. Cathodoluminescence is dominated by the hexagonal (D°, X) transition and reveals evidence of small quantities of the cubic phase.

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EP - 1947

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -

Low temperature scanning tunneling microscope-induced luminescence of GaN

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