Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy; C. K. Harnett; Harold G. Craighead; T. J. Eustis; W. A. Davis; M. J. Murphy; W. J. Schaff; L. F. Eastman

Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy, C. K. Harnett, Harold G. Craighead, T. J. Eustis, W. A. Davis, M. J. Murphy, W. J. Schaff, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 10¹⁸ to 10¹⁹ cm^-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Editors	Anon
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
State	Published - Jan 1 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Other

Other	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	5/3/98 → 5/8/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Low-temperature scanning tunneling microscope-induced luminescence of GaN. / Evoy, S.; Harnett, C. K.; Craighead, Harold G. et al.

Conference on Lasers and Electro-Optics Europe - Technical Digest. ed. / Anon. Piscataway, NJ, United States : Institute of Electrical and Electronics Engineers Inc., 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Evoy, S, Harnett, CK, Craighead, HG, Eustis, TJ, Davis, WA, Murphy, MJ, Schaff, WJ & Eastman, LF 1998, Low-temperature scanning tunneling microscope-induced luminescence of GaN. in Anon (ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States, Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO, San Francisco, CA, USA, 5/3/98.

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abstract = "Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.",

author = "S. Evoy and Harnett, {C. K.} and Craighead, {Harold G.} and Eustis, {T. J.} and Davis, {W. A.} and Murphy, {M. J.} and Schaff, {W. J.} and Eastman, {L. F.}",

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T1 - Low-temperature scanning tunneling microscope-induced luminescence of GaN

AU - Evoy, S.

AU - Harnett, C. K.

AU - Craighead, Harold G.

AU - Eustis, T. J.

AU - Davis, W. A.

AU - Murphy, M. J.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

AB - Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

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M3 - Conference contribution

AN - SCOPUS:0031617977

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ, United States

Y2 - 3 May 1998 through 8 May 1998

ER -

Low-temperature scanning tunneling microscope-induced luminescence of GaN

Abstract

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ASJC Scopus subject areas

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