Low-temperature scanning tunneling microscope-induced luminescence of GaN

S. Evoy, C. K. Harnett, Harold G. Craighead, T. J. Eustis, W. A. Davis, M. J. Murphy, W. J. Schaff, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Experiments were performed on Si-doped (n-type) α-GaN films grown in sapphire by molecular beam epitaxy (MBE). Doping concentrations in the range of n = 1018 to 1019 cm-3 were used. Scanning electron microscope-induced cathodoluminescence (SEM-CL) reveals submicrometer features and evidence of small quantities of cubic crystallites in some samples. Preliminary spectroscopic analysis involving band-pass filter suggest near band-edge emission, as well as emission covering the visible range.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
StatePublished - Jan 1 1998
EventProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA
Duration: May 3 1998May 8 1998


OtherProceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Low-temperature scanning tunneling microscope-induced luminescence of GaN'. Together they form a unique fingerprint.

Cite this