TY - JOUR
T1 - Localized auger recombination in quantum-dot lasers
AU - Blood, Peter
AU - Pask, Helen
AU - Summers, Huw D.
AU - Sandall, Ian
N1 - Funding Information:
Manuscript received December 20, 2006; revised July 16, 2007. This paper was supported in part by the EPSRC under a research studentship and a Platform Grant. P. Blood, H. D. Summers, and I. Sandall are with the School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K. (e-mail: [email protected]). H. Pask was with the School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, U.K. Digital Object Identifier 10.1109/JQE.2007.907541
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/12
Y1 - 2007/12
N2 - We have calculated radiative and Auger recombination rates due to localized recombination in individual dots, for ensemble of 106 dots with carriers occupying the inhomogeneous distribution of energy states according to global Fermi-Dirac statistics. The recombination rates cannot be represented by simple power laws, though the Auger rate has a stronger dependence the ensemble electron population than radiative recombination. Using single-dot recombination probabilities which are independent of temperature, the ensemble recombination rates and modal gain decrease with increasing temperature at fixed population. The net effect is that the threshold current density increases with increasing temperature due to the increase in threshold carrier density. The most significant consequence of these effects is that the temperature dependence of the Auger recombination rate threshold is much weaker than in quantum wells, being characterized by a To value of about 325 K. Observations of a strong temperature dependence of threshold in quantum dot lasers may have explanations other than Auger recombination, such recombination from higher lying states, or carrier leakage.
AB - We have calculated radiative and Auger recombination rates due to localized recombination in individual dots, for ensemble of 106 dots with carriers occupying the inhomogeneous distribution of energy states according to global Fermi-Dirac statistics. The recombination rates cannot be represented by simple power laws, though the Auger rate has a stronger dependence the ensemble electron population than radiative recombination. Using single-dot recombination probabilities which are independent of temperature, the ensemble recombination rates and modal gain decrease with increasing temperature at fixed population. The net effect is that the threshold current density increases with increasing temperature due to the increase in threshold carrier density. The most significant consequence of these effects is that the temperature dependence of the Auger recombination rate threshold is much weaker than in quantum wells, being characterized by a To value of about 325 K. Observations of a strong temperature dependence of threshold in quantum dot lasers may have explanations other than Auger recombination, such recombination from higher lying states, or carrier leakage.
KW - Auger recombination
KW - Quantum-dot lasers
KW - Recom bination proceses
KW - Temperature-dependence of threshold current
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U2 - 10.1109/JQE.2007.907541
DO - 10.1109/JQE.2007.907541
M3 - Article
AN - SCOPUS:36348956142
SN - 0018-9197
VL - 43
SP - 1140
EP - 1146
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 12
ER -