Localized auger recombination in quantum-dot lasers

Peter Blood, Helen Pask, Huw D. Summers, Ian Sandall

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We have calculated radiative and Auger recombination rates due to localized recombination in individual dots, for ensemble of 106 dots with carriers occupying the inhomogeneous distribution of energy states according to global Fermi-Dirac statistics. The recombination rates cannot be represented by simple power laws, though the Auger rate has a stronger dependence the ensemble electron population than radiative recombination. Using single-dot recombination probabilities which are independent of temperature, the ensemble recombination rates and modal gain decrease with increasing temperature at fixed population. The net effect is that the threshold current density increases with increasing temperature due to the increase in threshold carrier density. The most significant consequence of these effects is that the temperature dependence of the Auger recombination rate threshold is much weaker than in quantum wells, being characterized by a To value of about 325 K. Observations of a strong temperature dependence of threshold in quantum dot lasers may have explanations other than Auger recombination, such recombination from higher lying states, or carrier leakage.

Original languageEnglish (US)
Pages (from-to)1140-1146
Number of pages7
JournalIEEE Journal of Quantum Electronics
Issue number12
StatePublished - Dec 2007


  • Auger recombination
  • Quantum-dot lasers
  • Recom bination proceses
  • Temperature-dependence of threshold current

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)


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