Line broadening due to carrier-carrier scattering in quantum well heterostructures

R. A H Hamilton, P. Rees

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Uncertainty in electron energy levels due to carrier-carrier scattering is thought to cause line broadening in quantum well lasers. Calculations of this effect in the conduction and valence bands are presented. Approximate results applicable over a range of materials, temperatures and Fermi levels are given.

Original languageEnglish (US)
Article number019
Pages (from-to)728-734
Number of pages7
JournalSemiconductor Science and Technology
Volume8
Issue number5
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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