Abstract
Uncertainty in electron energy levels due to carrier-carrier scattering is thought to cause line broadening in quantum well lasers. Calculations of this effect in the conduction and valence bands are presented. Approximate results applicable over a range of materials, temperatures and Fermi levels are given.
| Original language | English (US) |
|---|---|
| Article number | 019 |
| Pages (from-to) | 728-734 |
| Number of pages | 7 |
| Journal | Semiconductor Science and Technology |
| Volume | 8 |
| Issue number | 5 |
| DOIs | |
| State | Published - Dec 1 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry