E. A. Dobisz, Harold G. Craighead, S. A. Schwarz, P. S D Lin, K. Kash, L. M. Schiavone, A. Scherer, J. P. Harbison

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Impurity and crystal defect induced compositional disordering of GaAs/Al//xGa//1// minus //xAs layered structures offers new microfabrication possibilities. By ion implantation one can control the location of the mixed region and control the degree of mixing. Specimens in this study were implanted with aluminum or silicon at energies and doses to give similar implanted-ion profiles. These were examined by cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and cathodoluminescence. The samples implanted with Al were found to partially disorder at a depth centered around the maximum damage peak. Silicon was found to disorder the material more completely than Al, and the disordered region extended to a depth greater than two times the projectile range. The effects of different annealing conditions on the disordering are discussed. We also implanted samples through high resolution ion masks and studied the disorder profile by TEM. The study revealed that the lateral disorder front follows that expected from the straggle of implanted ions.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsSayan D. Mukherjee
Place of PublicationBellingham, WA, USA
Number of pages9
ISBN (Print)089252832X
StatePublished - Dec 1 1987

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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