Lateral diffusion limitations of InGaAs/GaAs for nanostructure fabrication

Gregory F. Redinbo, Harold G. Craighead

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the technique of implantation enhanced interdiffusion (IEI) for optical nanostructure fabrication in strained In xGa 1-xAs/GaAs quantum wells. Implantation masks with widths from 40 nm to 40 μm were fabricated on the surface of In xGa 1-xAs/GaAs (x=0.1, 0.2) 3.5 nm quantum well material which was implanted with 100 kV As + with doses ranging from 5 × 10 12 to 8.5 × 10 13 ions/cm 2. After mask removal and a high temperature anneal, cathodoluminescence (CL) spectroscopy was used to investigate the optical properties of the resulting structures. We have measured electron-heavy hole recombination energy shifts due to quantum well interdiffusion of up to 60 meV for the highest doses used here with broad area implants. However, while quantum well emission under large (40 μm) masks is preserved, smaller masks show an emission blue shift not due to ions penetrating through the mask. A simple model of the width dependence of this shift yields an enhanced lateral diffusion length of approximately 1 μm which is many times larger than the lateral straggle of the implanted As +. We conclude that lateral diffusion effects may impose a limit on nanostructure fabrication in the In xGa 1-xAs/GaAs system with this technique.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages67-72
Number of pages6
Volume380
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/17/954/20/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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