Abstract
Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.
| Original language | English (US) |
|---|---|
| Article number | 013401 |
| Journal | Physical Review Materials |
| Volume | 3 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2 2019 |
ASJC Scopus subject areas
- General Materials Science
- Physics and Astronomy (miscellaneous)
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