Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)