Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi; Y. Kangawa; Alberto Pimpinelli; T. L. Einstein

doi:10.1103/PhysRevMaterials.3.013401

Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi, Y. Kangawa, Alberto Pimpinelli, T. L. Einstein

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

Original language	English (US)
Article number	013401
Journal	Physical Review Materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevMaterials.3.013401
State	Published - Jan 2 2019

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy (miscellaneous)

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10.1103/PhysRevMaterials.3.013401

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title = "Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy",

abstract = "Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.",

author = "Y. Inatomi and Y. Kangawa and Alberto Pimpinelli and Einstein, {T. L.}",

note = "Funding Information: This work was partially supported by the JSPS KAKENHI Grant No. JP16H06418, MEXT GaN R&D Project, and JST CREST (Grant No. JPMJCR16N2). Publisher Copyright: {\textcopyright} 2019 American Physical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

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doi = "10.1103/PhysRevMaterials.3.013401",

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T1 - Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

AU - Inatomi, Y.

AU - Kangawa, Y.

AU - Pimpinelli, Alberto

AU - Einstein, T. L.

N1 - Funding Information: This work was partially supported by the JSPS KAKENHI Grant No. JP16H06418, MEXT GaN R&D Project, and JST CREST (Grant No. JPMJCR16N2). Publisher Copyright: © 2019 American Physical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2019/1/2

Y1 - 2019/1/2

N2 - Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

AB - Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

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Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

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