Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

Y. Inatomi, Y. Kangawa, Alberto Pimpinelli, T. L. Einstein

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Relationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed. Thermodynamic properties of gas species and adsorption energies obtained by first-principles calculation were used in the model. The predicted carbon concentration range, 1015∼1017cm-3, agreed with that of experimental results quantitatively. The calculation results also reproduced experimental tendency: Carbon concentration decreases with increase of NH3 partial pressure and total pressure and/or decrease of trimethylgallium partial pressure.

Original languageEnglish (US)
Article number013401
JournalPhysical Review Materials
Volume3
Issue number1
DOIs
StatePublished - Jan 2 2019

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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