Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq; M. Vladimirova; A. Pimpinelli

doi:10.1016/S0169-4332(01)00156-8

Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq, M. Vladimirova, A. Pimpinelli

Houston Methodist

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

Original language	English (US)
Pages (from-to)	140-145
Number of pages	6
Journal	Applied Surface Science
Volume	175-176
DOIs	https://doi.org/10.1016/S0169-4332(01)00156-8
State	Published - May 15 2001

Keywords

GaAs
Growth modeling
Homoepitaxy
Monte Carlo simulations
Morphological instabilities
Surface structuring

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(01)00156-8

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abstract = "We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.",

keywords = "GaAs, Growth modeling, Homoepitaxy, Monte Carlo simulations, Morphological instabilities, Surface structuring",

author = "A. Videcoq and M. Vladimirova and A. Pimpinelli",

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T1 - Kinetic surface structuring during homoepitaxy of GaAs (110)

T2 - A model study

AU - Videcoq, A.

AU - Vladimirova, M.

AU - Pimpinelli, A.

PY - 2001/5/15

Y1 - 2001/5/15

N2 - We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

AB - We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

KW - GaAs

KW - Growth modeling

KW - Homoepitaxy

KW - Monte Carlo simulations

KW - Morphological instabilities

KW - Surface structuring

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DO - 10.1016/S0169-4332(01)00156-8

M3 - Article

AN - SCOPUS:0035873267

SN - 0169-4332

VL - 175-176

SP - 140

EP - 145

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

Abstract

Keywords

ASJC Scopus subject areas

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