Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq; M. Vladimirova; Alberto Pimpinelli

doi:10.1016/S0169-4332(01)00156-8

Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq, M. Vladimirova, Alberto Pimpinelli

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

Original language	English (US)
Pages (from-to)	140-145
Number of pages	6
Journal	Applied Surface Science
Volume	175-176
DOIs	https://doi.org/10.1016/S0169-4332(01)00156-8
State	Published - May 15 2001

Keywords

GaAs
Growth modeling
Homoepitaxy
Monte Carlo simulations
Morphological instabilities
Surface structuring

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(01)00156-8

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abstract = "We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.",

keywords = "GaAs, Growth modeling, Homoepitaxy, Monte Carlo simulations, Morphological instabilities, Surface structuring",

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T1 - Kinetic surface structuring during homoepitaxy of GaAs (110)

T2 - A model study

AU - Videcoq, A.

AU - Vladimirova, M.

AU - Pimpinelli, Alberto

PY - 2001/5/15

Y1 - 2001/5/15

N2 - We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

AB - We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

KW - GaAs

KW - Growth modeling

KW - Homoepitaxy

KW - Monte Carlo simulations

KW - Morphological instabilities

KW - Surface structuring

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JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

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