Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq, M. Vladimirova, Alberto Pimpinelli

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

Original languageEnglish (US)
Pages (from-to)140-145
Number of pages6
JournalApplied Surface Science
Volume175-176
DOIs
StatePublished - May 15 2001

Keywords

  • GaAs
  • Growth modeling
  • Homoepitaxy
  • Monte Carlo simulations
  • Morphological instabilities
  • Surface structuring

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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