Kinetic surface structuring during homoepitaxy of GaAs (110): A model study

A. Videcoq, M. Vladimirova, A. Pimpinelli

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.

Original languageEnglish (US)
Pages (from-to)140-145
Number of pages6
JournalApplied Surface Science
StatePublished - May 15 2001


  • GaAs
  • Growth modeling
  • Homoepitaxy
  • Monte Carlo simulations
  • Morphological instabilities
  • Surface structuring

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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