Abstract
We propose and study analytically and by kinetic Monte Carlo simulations a simple model for the homoepitaxial growth of GaAs on vicinals of GaAs (1 1 0). Our model displays a step bunching-step meandering transition that qualitatively reproduces the behavior observed experimentally, as well as more complex self-organized patterning where bunching and meandering appear simultaneously.
Original language | English (US) |
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Pages (from-to) | 140-145 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 175-176 |
DOIs | |
State | Published - May 15 2001 |
Keywords
- GaAs
- Growth modeling
- Homoepitaxy
- Monte Carlo simulations
- Morphological instabilities
- Surface structuring
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films