Abstract
The spontaneous patterning of epitaxially growing surfaces is studied in the framework of two-species models of step flow, designed to describe epitaxial deposition in complex systems as compound semiconductors MBE, MOVPE and HVPE. Self-organisation follows from step-edge potential energy barriers, as well as from the coupling of the diffusing species at the crystal surface. The characteristic length-scales of surface patterns such as ridges and step bunches are investigated with kinetic Monte Carlo simulations, and analytic estimations as a functions of growth parameters are proposed. The present analysis can be considered as an efficient tool for guiding the experimental control of surface patterning.
Original language | English (US) |
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Pages (from-to) | 55-61 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 175-176 |
DOIs | |
State | Published - May 15 2001 |
Keywords
- Epitaxial growth
- Monte Carlo simulations
- Two-particle models
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films