Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon

E. Gil-Lafon; J. Napierala; D. Castelluci; Alberto Pimpinelli; B. Gérard; D. Pribat

Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon

E. Gil-Lafon, J. Napierala, D. Castelluci, Alberto Pimpinelli, B. Gérard, D. Pribat

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The selective growth of GaAs by HVPE was studied on (001), (110), (111)_Ga and (111)_As GaAs patterned substrates by varying the III/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCl molecules and takes into account the chlorine desorption by H₂. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 10⁵ cm^-2 SEM analyses reveal that conformal growth fronts consist in (110) and (111)_As planes under the III/V ratios (superior to 1) which were tested.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	33-38
Number of pages	6
Volume	535
ISBN (Print)	1558994416, 9781558994416
State	Published - Dec 1 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

Other

Other	Proceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications'
City	Boston, MA, USA
Period	11/30/98 → 12/3/98

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon. / Gil-Lafon, E.; Napierala, J.; Castelluci, D. et al.
Materials Research Society Symposium - Proceedings. Vol. 535 Materials Research Society, 1999. p. 33-38.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gil-Lafon, E, Napierala, J, Castelluci, D, Pimpinelli, A, Gérard, B & Pribat, D 1999, Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon. in Materials Research Society Symposium - Proceedings. vol. 535, Materials Research Society, pp. 33-38, Proceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications', Boston, MA, USA, 11/30/98.

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abstract = "The selective growth of GaAs by HVPE was studied on (001), (110), (111)Ga and (111)As GaAs patterned substrates by varying the III/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCl molecules and takes into account the chlorine desorption by H2. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 105 cm-2 SEM analyses reveal that conformal growth fronts consist in (110) and (111)As planes under the III/V ratios (superior to 1) which were tested.",

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N2 - The selective growth of GaAs by HVPE was studied on (001), (110), (111)Ga and (111)As GaAs patterned substrates by varying the III/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCl molecules and takes into account the chlorine desorption by H2. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 105 cm-2 SEM analyses reveal that conformal growth fronts consist in (110) and (111)As planes under the III/V ratios (superior to 1) which were tested.

AB - The selective growth of GaAs by HVPE was studied on (001), (110), (111)Ga and (111)As GaAs patterned substrates by varying the III/V ratio. A kinetic modelling of the growth was developed, based upon the SEM observations of the growth morphologies as well as on experimental curve synthesis. The growth rate is written as a function of the diffusion fluxes of the adsorbed AsGa and AsGaCl molecules and takes into account the chlorine desorption by H2. 1.5 μm thick GaAs films were then fabricated on Si (001) by a confined epitaxial lateral overgrowth technique. These conformal films exhibit intense and uniform luminescence signals, showing that the dislocation densities of GaAs are lower than 105 cm-2 SEM analyses reveal that conformal growth fronts consist in (110) and (111)As planes under the III/V ratios (superior to 1) which were tested.

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Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon

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