Investigation of changes in absorber position in the 650 nm AlGaInP self-pulsating laser for optical storage applications

D. R. Jones, Paul Rees, I. Pierce, Huw Summers

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Self-pulsating laser diodes operating at 650 nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer of a laser it is possible to obtain the interplay between gain and absorption that is required for pulsation. A self-pulsating AlGaInP laser is modelled in order to gain an insight into how the distance between the active and absorber layers affects the laser output. Results indicate that the device performance can be altered significantly as the distance changes, showing that this design feature is a key parameter for optimum performance.

Original languageEnglish (US)
Pages (from-to)65-68
Number of pages4
JournalIEE Proceedings: Optoelectronics
Volume148
Issue number1
DOIs
StatePublished - Feb 1 2001

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation of changes in absorber position in the 650 nm AlGaInP self-pulsating laser for optical storage applications'. Together they form a unique fingerprint.

Cite this