Improved electron-beam patterning of Si with self-assembled monolayers

C. S. Whelan, M. J. Lercel, Harold G. Craighead, K. Seshadri, D. L. Allara

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


A set of processes has been explored that enhances the utility of self-assembled-monolayer electron-beam resists for patterning silicon. A self-assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 μCl cm2. After the patterned monolayer was developed using ultraviolet light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of ∼30 nm were etched in silicon using the patterned oxide as a reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process.

Original languageEnglish (US)
Pages (from-to)4245-4247
Number of pages3
JournalApplied Physics Letters
Issue number27
StatePublished - Dec 30 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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