High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber

H. D. Summers, C. H. Molloy, P. M. Smowton, P. Rees, I. Pierce, D. R. Jones

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.

Original languageEnglish (US)
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Editors Anon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages145-146
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn
Duration: Oct 4 1998Oct 8 1998

Other

OtherProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC
CityNara, Jpn
Period10/4/9810/8/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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