Abstract
AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.
Original language | English (US) |
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Title of host publication | Conference Digest - IEEE International Semiconductor Laser Conference |
Editors | Anon |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 145-146 |
Number of pages | 2 |
State | Published - 1998 |
Event | Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: Oct 4 1998 → Oct 8 1998 |
Other
Other | Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC |
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City | Nara, Jpn |
Period | 10/4/98 → 10/8/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics