High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber

H. D. Summers; C. H. Molloy; P. M. Smowton; P. Rees; I. Pierce; D. R. Jones

High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber

H. D. Summers, C. H. Molloy, P. M. Smowton, P. Rees, I. Pierce, D. R. Jones

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.

Original language	English (US)
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Editors	Anon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	145-146
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: Oct 4 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC
City	Nara, Jpn
Period	10/4/98 → 10/8/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

Fingerprint Dive into the research topics of 'High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber'. Together they form a unique fingerprint.

Cite this

High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber. / Summers, H. D.; Molloy, C. H.; Smowton, P. M.; Rees, P.; Pierce, I.; Jones, D. R.

Conference Digest - IEEE International Semiconductor Laser Conference. ed. / Anon. Institute of Electrical and Electronics Engineers Inc., 1998. p. 145-146.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Summers, HD, Molloy, CH, Smowton, PM, Rees, P, Pierce, I & Jones, DR 1998, High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber. in Anon (ed.), Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., pp. 145-146, Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC, Nara, Jpn, 10/4/98.

@inproceedings{ed566121f69c40b5a913e23d99f7f99f,

title = "High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber",

abstract = "AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.",

author = "Summers, {H. D.} and Molloy, {C. H.} and Smowton, {P. M.} and P. Rees and I. Pierce and Jones, {D. R.}",

year = "1998",

language = "English (US)",

pages = "145--146",

editor = "Anon",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC ; Conference date: 04-10-1998 Through 08-10-1998",

}

TY - GEN

T1 - High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber

AU - Summers, H. D.

AU - Molloy, C. H.

AU - Smowton, P. M.

AU - Rees, P.

AU - Pierce, I.

AU - Jones, D. R.

PY - 1998

Y1 - 1998

N2 - AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.

AB - AlGaInP lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100 °C, in the p-doped devices which have an absorber recovery time of 0.4 ns.

UR - http://www.scopus.com/inward/record.url?scp=0032320570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032320570&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032320570

SP - 145

EP - 146

BT - Conference Digest - IEEE International Semiconductor Laser Conference

A2 - Anon, null

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC

Y2 - 4 October 1998 through 8 October 1998

ER -