High-temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Low-coherence self-pulsating laser diodes operating at a wavelength of 650 nm and at temperatures in excess of 70°C are required for high density optical storage systems. We report on AlGaInP lasers operating at this wavelength which exhibit stable self-pulsation up to a temperature of 100°C. The lasers are 50-μm-wide oxide-isolated stripe devices in which the saturable absorption necessary for pulsation is provided by multiple-quantum wells placed within the p-doped cladding layer. The pulsation frequency of the devices increases linearly with increasing drive current and is present up to 1.5 times lasing threshold.

Original languageEnglish (US)
Pages (from-to)1217-1219
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number9
DOIs
StatePublished - Sep 1998

Keywords

  • Nonlinearity in lasers
  • Optical bistability
  • Quantum-well lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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