High-resolution silicon patterning with self-assembled monolayer resists

M. J. Lercel, C. S. Whelan, H. G. Craighead, K. Seshadri, D. L. Allara

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

Single crystal and polycrystalline silicon films have been patterned and etched with a novel high-selectivity process using self-assembled monolayer resists of octadecylsiloxanes (ODS). The highest resolution patterning of sub-10 nm features has been demonstrated by scanning force microscopy imaging of ODS layers patterned with a focused electron beam. An all-dry UV/ozone developer has been used to remove residual carbon from the electron beam exposed regions to improve etch selectivity. The positive tone pattern transfer process consisted of a short buffered hydrofluoric acid wet etch to remove the silicon native oxide followed by a high-selectivity, low ion energy etch using Cl2 and BCl3 in an electron cyclotron resonance reactive ion etch. Features have been etched up to 90 nm deep into Si(100) wafers and minimum feature sizes obtained are ∼25 nm. Poly-Si films on SiO2 insulator layers have been similarly patterned and have been used in a combined process with photolithographic definition of microbridges to form narrow conducting channels in the poly-Si.

Original languageEnglish (US)
Pages (from-to)4085-4090
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number6
DOIs
StatePublished - 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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