High resolution electron beam lithography on CaF2

P. M. Mankiewich, H. G. Craighead, T. R. Harrison, A. H. Dayem

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

30-nm lines on 200-nm centers have been fabricated in CaF//2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF//2 film and reaction to CaO followed by development in H//2O.

Original languageEnglish (US)
Pages (from-to)468-469
Number of pages2
JournalApplied Physics Letters
Volume44
Issue number4
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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