Abstract
Conformal growth consists in a confined lateral selective epitaxy of III-V materials on silicon from III-V oriented seeds, the vertical growth being stopped by an overhanging dielectric mask. Low-dislocation density (a few 104 cm-2) GaAs conformal layers can then be achieved exhibiting vertical {1 1 0} or inclined {1 1 1} mono-facetted growth fronts. New n (Si) and p (Zn) doped, laterally modulated GaAs structures were grown on Si by hydride vapour phase epitaxy (HVPE) using the conformal growth technique. The doping distribution was studied using spatially resolved cathodoluminescence (CL) and Micro-Raman spectroscopy. The feasibility of the conformal growth technique for selective doping was demonstrated and a first lateral n/p junction was characterised.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 267-270 |
| Number of pages | 4 |
| Journal | Optical Materials |
| Volume | 17 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Jun 2001 |
| Event | Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: May 30 2000 → Jun 2 2000 |
Keywords
- Conformal epitaxy
- GaAs/Si
- HVPE
- Lateral modulation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Computer Science
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering