High-quality GaAs-related lateral junctions on Si by conformal growth

E. Gil-Lafon, A. Videcoq, J. Napierala, D. Castelluci, A. Pimpinelli, B. Gérard, J. Jimenez, M. Avella

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

Conformal growth consists in a confined lateral selective epitaxy of III-V materials on silicon from III-V oriented seeds, the vertical growth being stopped by an overhanging dielectric mask. Low-dislocation density (a few 104 cm-2) GaAs conformal layers can then be achieved exhibiting vertical {1 1 0} or inclined {1 1 1} mono-facetted growth fronts. New n (Si) and p (Zn) doped, laterally modulated GaAs structures were grown on Si by hydride vapour phase epitaxy (HVPE) using the conformal growth technique. The doping distribution was studied using spatially resolved cathodoluminescence (CL) and Micro-Raman spectroscopy. The feasibility of the conformal growth technique for selective doping was demonstrated and a first lateral n/p junction was characterised.

Original languageEnglish (US)
Pages (from-to)267-270
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
StatePublished - Jun 2001
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: May 30 2000Jun 2 2000

Keywords

  • Conformal epitaxy
  • GaAs/Si
  • HVPE
  • Lateral modulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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