Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Guy Tsamo; Alla G. Nastovjak; Nataliya L. Shwartz; Philip E. Hoggan; Christine Robert-Goumet; Alberto Pimpinelli; Matthieu Petit; Alain Ranguis; Emmanuel Gardes; Mamour Sall; Luc Bideux; Guillaume Monier

doi:10.1021/acs.jpcc.3c07945

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Guy Tsamo, Alla G. Nastovjak, Nataliya L. Shwartz, Philip E. Hoggan, Christine Robert-Goumet, Alberto Pimpinelli, Matthieu Petit, Alain Ranguis, Emmanuel Gardes, Mamour Sall, Luc Bideux, Guillaume Monier

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Abstract

In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>10¹¹cm^-2) of GaN nanodots with the zinc blende crystallinity.

Original language	English (US)
Pages (from-to)	5168-5178
Number of pages	11
Journal	Journal of Physical Chemistry C
Volume	128
Issue number	12
DOIs	https://doi.org/10.1021/acs.jpcc.3c07945
State	Published - Mar 28 2024

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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Tsamo, G., Nastovjak, A. G., Shwartz, N. L., Hoggan, P. E., Robert-Goumet, C., Pimpinelli, A., Petit, M., Ranguis, A., Gardes, E., Sall, M., Bideux, L., & Monier, G. (2024). Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations. Journal of Physical Chemistry C, 128(12), 5168-5178. https://doi.org/10.1021/acs.jpcc.3c07945

Tsamo, G, Nastovjak, AG, Shwartz, NL, Hoggan, PE, Robert-Goumet, C, Pimpinelli, A, Petit, M, Ranguis, A, Gardes, E, Sall, M, Bideux, L & Monier, G 2024, 'Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations', Journal of Physical Chemistry C, vol. 128, no. 12, pp. 5168-5178. https://doi.org/10.1021/acs.jpcc.3c07945

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title = "Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations",

abstract = "In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>1011cm-2) of GaN nanodots with the zinc blende crystallinity.",

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AU - Tsamo, Guy

AU - Nastovjak, Alla G.

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AU - Hoggan, Philip E.

AU - Robert-Goumet, Christine

AU - Pimpinelli, Alberto

AU - Petit, Matthieu

AU - Ranguis, Alain

AU - Gardes, Emmanuel

AU - Sall, Mamour

AU - Bideux, Luc

AU - Monier, Guillaume

PY - 2024/3/28

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N2 - In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>1011cm-2) of GaN nanodots with the zinc blende crystallinity.

AB - In this work, we present the conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in situ by X-ray photoelectron spectroscopy and ex situ by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. These studies were coupled with kinetic Monte Carlo simulations to precisely understand the phenomena occurring during the nitridation and to find the optimum conditions for complete nitridation of gallium droplets. The HRTEM observation showed a cubic (zinc blende) crystal structure of the GaN nanodots for a nitridation at 300 °C. Ramping the temperature from 100 to 350 °C during droplet nitridation enabled to obtain a very high density (>1011cm-2) of GaN nanodots with the zinc blende crystallinity.

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Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

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