Abstract
Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.
Original language | English (US) |
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Pages (from-to) | 2792-2794 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 20 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)