Gain-current characteristics of strained AlGaInP quantum well lasers

H. D. Summers; P. Blood; P. Rees

doi:10.1063/1.110336

Gain-current characteristics of strained AlGaInP quantum well lasers

H. D. Summers, P. Blood, P. Rees

Houston Methodist

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with Ga_xIn_1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

Original language	English (US)
Pages (from-to)	2792-2794
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	20
DOIs	https://doi.org/10.1063/1.110336
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110336

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abstract = "Single quantum well AlGaInP lasers, each having a 65 {\AA} width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.",

author = "Summers, {H. D.} and P. Blood and P. Rees",

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T1 - Gain-current characteristics of strained AlGaInP quantum well lasers

AU - Summers, H. D.

AU - Blood, P.

AU - Rees, P.

PY - 1993

Y1 - 1993

N2 - Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

AB - Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

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JF - Applied Physics Letters

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Gain-current characteristics of strained AlGaInP quantum well lasers

Abstract

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