Gain-current characteristics of strained AlGaInP quantum well lasers

H. D. Summers; P. Blood; P. Rees

doi:10.1063/1.110336

Gain-current characteristics of strained AlGaInP quantum well lasers

H. D. Summers, P. Blood, P. Rees

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with Ga_xIn_1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

Original language	English (US)
Pages (from-to)	2792-2794
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	20
DOIs	https://doi.org/10.1063/1.110336
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110336

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@article{320e1f59b5af43e5b9e439907f1226bf,

title = "Gain-current characteristics of strained AlGaInP quantum well lasers",

abstract = "Single quantum well AlGaInP lasers, each having a 65 {\AA} width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.",

author = "Summers, {H. D.} and P. Blood and P. Rees",

year = "1993",

doi = "10.1063/1.110336",

language = "English (US)",

volume = "63",

pages = "2792--2794",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Gain-current characteristics of strained AlGaInP quantum well lasers

AU - Summers, H. D.

AU - Blood, P.

AU - Rees, P.

PY - 1993

Y1 - 1993

N2 - Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

AB - Single quantum well AlGaInP lasers, each having a 65 Å width well have been fabricated with GaxIn1-xP well compositions from x=0.43 to 0.54 grown on substrates orientated 10°off the (100) axis. The threshold currents have been measured from 120 K to room temperature and the samples show a systematic variation with x. At low temperature the results are in good agreement with our calculated gain-current curves and we show that at room temperature the rapid increase in threshold current density with decreasing length is due to a thermally activated leakage current rather than gain saturation.

UR - http://www.scopus.com/inward/record.url?scp=4243170362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243170362&partnerID=8YFLogxK

U2 - 10.1063/1.110336

DO - 10.1063/1.110336

M3 - Article

AN - SCOPUS:4243170362

VL - 63

SP - 2792

EP - 2794

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -

Gain-current characteristics of strained AlGaInP quantum well lasers

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