The gain-current characteristics of undoped GaInP (660-nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band-gap narrowing and lifetime broadening due to carrier-carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10-13 s and as a carrier-dependent value proportional to n-1/3. Using τ=10-13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm-1 (A cm -2 μm-1)-1 and a value for the transparency current J0 of 4.4 kA cm-2 μm-1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)