Gain-current calculations for bulk GaInP lasers including many-body effects

P. Rees; H. D. Summers; P. Blood

doi:10.1063/1.105669

Gain-current calculations for bulk GaInP lasers including many-body effects

P. Rees, H. D. Summers, P. Blood

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Abstract

The gain-current characteristics of undoped GaInP (660-nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band-gap narrowing and lifetime broadening due to carrier-carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10^-13 s and as a carrier-dependent value proportional to n^-1/3. Using τ=10^-13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm^-1 (A cm ^-2 μm^-1)^-1 and a value for the transparency current J₀ of 4.4 kA cm^-2 μm^-1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.

Original language	English (US)
Pages (from-to)	3521-3523
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	27
DOIs	https://doi.org/10.1063/1.105669
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Gain-current calculations for bulk GaInP lasers including many-body effects",

abstract = "The gain-current characteristics of undoped GaInP (660-nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band-gap narrowing and lifetime broadening due to carrier-carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10-13 s and as a carrier-dependent value proportional to n-1/3. Using τ=10-13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm-1 (A cm -2 μm-1)-1 and a value for the transparency current J0 of 4.4 kA cm-2 μm-1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.",

author = "P. Rees and Summers, {H. D.} and P. Blood",

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doi = "10.1063/1.105669",

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T1 - Gain-current calculations for bulk GaInP lasers including many-body effects

AU - Rees, P.

AU - Summers, H. D.

AU - Blood, P.

PY - 1991

Y1 - 1991

N2 - The gain-current characteristics of undoped GaInP (660-nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band-gap narrowing and lifetime broadening due to carrier-carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10-13 s and as a carrier-dependent value proportional to n-1/3. Using τ=10-13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm-1 (A cm -2 μm-1)-1 and a value for the transparency current J0 of 4.4 kA cm-2 μm-1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.

AB - The gain-current characteristics of undoped GaInP (660-nm) bulk lasers have been calculated over a range of temperatures. The calculations use parabolic bands with strict k selection and include band-gap narrowing and lifetime broadening due to carrier-carrier interactions at high densities. The broadening lifetime τ has been implemented as a constant value of 10-13 s and as a carrier-dependent value proportional to n-1/3. Using τ=10-13 s, our calculations for GaInP at room temperature give a value for the differential gain β of 0.026 cm-1 (A cm -2 μm-1)-1 and a value for the transparency current J0 of 4.4 kA cm-2 μm-1. These are in close agreement with experimental results. Results for GaAs at room temperature are also given.

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Gain-current calculations for bulk GaInP lasers including many-body effects

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